IRFU3709PBF Single MOSFETs Transistors_Electronic components_ Integrated circuit IC_ Semiconductor components_ Equipment procurement_ EIS LIMITED

TYPE	DESCRIPTION
Surface Mount	NO
Number of Terminals	3
Transistor Element Material	SILICON
Package Shape	RECTANGULAR
Manufacturer	International Rectifier
JESD-609 Code	e3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory	FET General Purpose Power
Terminal Position	SINGLE
Terminal Form	THROUGH-HOLE
Peak Reflow Temperature (Cel)	260
Reach Compliance Code	not_compliant
Pin Count	3
JESD-30 Code	R-PSIP-T3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Transistor Application	SWITCHING
Polarity/Channel Type	N-CHANNEL
JEDEC-95 Code	TO-251AA
Drain Current-Max (Abs) (ID)	90 A
Drain-source On Resistance-Max	0.009 Ω
Pulsed Drain Current-Max (IDM)	360 A
DS Breakdown Voltage-Min	30 V
Avalanche Energy Rating (Eas)	382 mJ
FET Technology	METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs)	120 W


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