IRF241 Single MOSFETs Transistors_Electronic components_ Integrated circuit IC_ Semiconductor components_ Equipment procurement_ EIS LIMITED

TYPE	DESCRIPTION
Mounting Type	Through Hole
Package / Case	TO-204AE
Surface Mount	NO
Supplier Device Package	TO-204AE
Number of Terminals	2
Transistor Element Material	SILICON
Mfr	International Rectifier
Package	Bulk
Product Status	Active
Power Dissipation (Max)	125W
RoHS	Compliant
Package Shape	ROUND
Manufacturer	Rochester Electronics LLC
Series	HEXFET?
Operating Temperature	-
Terminal Position	BOTTOM
Terminal Form	PIN/PEG
Reach Compliance Code	unknown
Pin Count	2
JESD-30 Code	O-MBFM-P2
Qualification Status	COMMERCIAL
Number of Elements	1
Configuration	SINGLE
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	-
Vgs(th) (Max) @ Id	-
Current - Continuous Drain (Id) @ 25°C	18A (Tc)
Drain to Source Voltage (Vdss)	150 V
Vgs (Max)	-
Polarity/Channel Type	N-CHANNEL
Continuous Drain Current (ID)	18 A
JEDEC-95 Code	TO-204AE
Drain-source On Resistance-Max	0.18 Ω
Pulsed Drain Current-Max (IDM)	72 A
DS Breakdown Voltage-Min	150 V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	-
Drain to Source Resistance	180 mΩ


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