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  • image of 单金属氧化物半导体场效应晶体管晶体管>FQPF4N60
  • image of 单金属氧化物半导体场效应晶体管晶体管>FQPF4N60
： FQPF4N60
： Single MOSFETs Transistors
： ON Semiconductor
： N-Channel Tube
： -
： TO-220-3 Full Pack
： YES

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image of 单金属氧化物半导体场效应晶体管晶体管>FQPF4N60
image of 单金属氧化物半导体场效应晶体管晶体管>FQPF4N60
：
FQPF4N60
：
Single MOSFETs Transistors
：
ON Semiconductor
：
N-Channel Tube
：
-
：
TO-220-3 Full Pack
：
YES
TYPEDESCRIPTION
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Supplier Device Package TO-220F
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series QFET®
Published 2000
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power Dissipation-Max 36W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.2Ohm @ 1.3A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 670pF @ 25V
Current - Continuous Drain (Id) @ 25°C 2.6A Tc
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
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