BTS121ANKSA1 Single MOSFETs Transistors_Electronic components_ Integrated circuit IC_ Semiconductor components_ Equipment procurement_ EIS LIMITED

TYPE	DESCRIPTION
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	TEMPFET®
Published	2000
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Additional Feature	LOGIC LEVEL COMPATIBLE
Terminal Position	SINGLE
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR
Power Dissipation-Max	95W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	95W
Case Connection	DRAIN
Turn On Delay Time	25 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	100m Ω @ 9.5A, 4.5V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	1500pF @ 25V
Current - Continuous Drain (Id) @ 25°C	22A Tc
Rise Time	110ns
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	4.5V
Vgs (Max)	±10V
Fall Time (Typ)	100 ns
Turn-Off Delay Time	210 ns
Continuous Drain Current (ID)	22A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	10V
Pulsed Drain Current-Max (IDM)	88A
Radiation Hardening	No
RoHS Status	RoHS Compliant


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