• image of 单金属氧化物半导体场效应晶体管晶体管>BSC020N03LSGATMA2
  • image of 单金属氧化物半导体场效应晶体管晶体管>BSC020N03LSGATMA2
BSC020N03LSGATMA2
Single MOSFETs Transistors
Infineon Technologies
Tape & Reel (
-
-
YES

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image of 单金属氧化物半导体场效应晶体管晶体管>BSC020N03LSGATMA2
image of 单金属氧化物半导体场效应晶体管晶体管>BSC020N03LSGATMA2
BSC020N03LSGATMA2
Single MOSFETs Transistors
Infineon Technologies
Tape & Reel (
-
-
YES
TYPEDESCRIPTION
Factory Lead Time 26 Weeks
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish MATTE TIN
Additional Feature ULTRA LOW RESISTANCE, LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
JESD-30 Code R-PDSO-F5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Transistor Application SWITCHING
Polarity/Channel Type N-CHANNEL
Drain Current-Max (Abs) (ID) 28A
Drain-source On Resistance-Max 0.0029Ohm
Pulsed Drain Current-Max (IDM) 400A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 180 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
RoHS Status ROHS3 Compliant
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