• image of 单金属氧化物半导体场效应晶体管晶体管>2SK1399-T1B-A
  • image of 单金属氧化物半导体场效应晶体管晶体管>2SK1399-T1B-A
2SK1399-T1B-A
Single MOSFETs Transistors
Renesas
-
-
YES

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image of 单金属氧化物半导体场效应晶体管晶体管>2SK1399-T1B-A
image of 单金属氧化物半导体场效应晶体管晶体管>2SK1399-T1B-A
2SK1399-T1B-A
Single MOSFETs Transistors
Renesas
-
-
YES
TYPEDESCRIPTION
Factory Lead Time 1 Week
Surface Mount YES
Number of Terminals 3
Transistor Element Material SILICON
Package Bulk
Mfr Renesas Electronics America Inc
Product Status Active
Package Shape RECTANGULAR
Manufacturer Renesas Electronics Corporation
Series *
Pbfree Code Yes
ECCN Code EAR99
Subcategory FET General Purpose Power
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Pin Count 3
JESD-30 Code R-PDSO-G3
Brand Name Renesas
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Polarity/Channel Type N-CHANNEL
Drain Current-Max (Abs) (ID) 0.1 A
Drain-source On Resistance-Max 40 Ω
DS Breakdown Voltage-Min 50 V
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 0.2 W
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