• image of 射频金属氧化物半导体场效应晶体管>PTFA260451E V1
  • image of 射频金属氧化物半导体场效应晶体管>PTFA260451E V1
PTFA260451E V1
RF MOSFETs Transistors
Infineon Technologies
PTFA260451E V1
-
2-Flatpack, Fin Leads
YES

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image of 射频金属氧化物半导体场效应晶体管>PTFA260451E V1
image of 射频金属氧化物半导体场效应晶体管>PTFA260451E V1
PTFA260451E V1
RF MOSFETs Transistors
Infineon Technologies
PTFA260451E V1
-
2-Flatpack, Fin Leads
YES
TYPEDESCRIPTION
Package / Case 2-Flatpack, Fin Leads
Supplier Device Package H-30265-2
Packaging Tray
Series GOLDMOS®
Published 2008
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Voltage - Rated 65V
Current Rating (Amps) 10μA
Frequency 2.68GHz
Current - Test 500mA
Transistor Type LDMOS
Gain 15dB
Power - Output 45W
Voltage - Test 28V
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