• image of 射频金属氧化物半导体场效应晶体管>NPT25015D
  • image of 射频金属氧化物半导体场效应晶体管>NPT25015D
NPT25015D
RF MOSFETs Transistors
M/A-Com Technology Solutions
NPT25015D datas
-
8-SOIC (0.154, 3.90mm Width) Exposed Pad
YES

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image of 射频金属氧化物半导体场效应晶体管>NPT25015D
image of 射频金属氧化物半导体场效应晶体管>NPT25015D
NPT25015D
RF MOSFETs Transistors
M/A-Com Technology Solutions
NPT25015D datas
-
8-SOIC (0.154, 3.90mm Width) Exposed Pad
YES
TYPEDESCRIPTION
Factory Lead Time 2 Weeks
Package / Case 8-SOIC (0.154, 3.90mm Width) Exposed Pad
Surface Mount YES
Transistor Element Material SILICON
Packaging Tube
Published 2013
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 8
Voltage - Rated 100V
Additional Feature HIGH RELIABILITY
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 5A
Frequency 0Hz~3GHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G8
Operating Temperature (Max) 85°C
Operating Temperature (Min) -40°C
Number of Elements 1
Configuration SINGLE
Operating Mode DEPLETION MODE
Case Connection SOURCE
Current - Test 200mA
Polarity/Channel Type N-CHANNEL
Transistor Type HEMT
Gain 14dB
Drain-source On Resistance-Max 0.5Ohm
DS Breakdown Voltage-Min 100V
Power - Output 1.5W
FET Technology HIGH ELECTRON MOBILITY
Voltage - Test 28V
Power Dissipation Ambient-Max 28W
RoHS Status ROHS3 Compliant
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