• image of 射频金属氧化物半导体场效应晶体管>MRFG35010AR1
  • image of 射频金属氧化物半导体场效应晶体管>MRFG35010AR1
MRFG35010AR1
RF MOSFETs Transistors
NXP USA Inc.
MRFG35010AR1 da
-
NI-360HF
YES

captcha
image of 射频金属氧化物半导体场效应晶体管>MRFG35010AR1
image of 射频金属氧化物半导体场效应晶体管>MRFG35010AR1
MRFG35010AR1
RF MOSFETs Transistors
NXP USA Inc.
MRFG35010AR1 da
-
NI-360HF
YES
TYPEDESCRIPTION
Package / Case NI-360HF
Packaging Tape & Reel (TR)
Published 2009
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Voltage - Rated 15V
Frequency 3.55GHz
Base Part Number MRFG35010
Current - Test 140mA
Transistor Type pHEMT FET
Gain 10dB
Power - Output 1W
Voltage - Test 12V
RoHS Status ROHS3 Compliant
1.jpg
 Orignal genuine       Each chip comes from the original factory


2.jpg
       

 Main products       Only make original stock


3.jpg
        

 Spot inventory       Only make original stock

4.jpg       

Original stockBom DistributioAffordable Price


+86-13723477211

sales@fuchaoic.com
0