• image of 射频金属氧化物半导体场效应晶体管>MRF7S19210HSR5
  • image of 射频金属氧化物半导体场效应晶体管>MRF7S19210HSR5
MRF7S19210HSR5
RF MOSFETs Transistors
NXP USA Inc.
MRF7S19210HSR5
-
NI-780S
YES

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image of 射频金属氧化物半导体场效应晶体管>MRF7S19210HSR5
image of 射频金属氧化物半导体场效应晶体管>MRF7S19210HSR5
MRF7S19210HSR5
RF MOSFETs Transistors
NXP USA Inc.
MRF7S19210HSR5
-
NI-780S
YES
TYPEDESCRIPTION
Package / Case NI-780S
Packaging Tape & Reel (TR)
Published 2011
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Voltage - Rated 65V
Frequency 1.99GHz
Base Part Number MRF7S19210
Current - Test 1.4A
Transistor Type LDMOS
Gain 20dB
Power - Output 63W
Voltage - Test 28V
RoHS Status ROHS3 Compliant
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