: | IXZ308N120 |
---|---|
: | RF MOSFETs Transistors |
: | IXYS-RF |
: | IXZ308N120 data |
: | - |
: | 6-SMD, Flat Lead Exposed Pad |
: | YES |
TYPE | DESCRIPTION |
Factory Lead Time | 10 Weeks |
Surface Mount | YES |
Package / Case | 6-SMD, Flat Lead Exposed Pad |
Number of Pins | 6 |
Supplier Device Package | DE375 |
Number of Terminals | 6 |
Transistor Element Material | SILICON |
RoHS | Compliant |
Package Shape | RECTANGULAR |
Manufacturer | IXYS Corporation |
Product Status | Obsolete |
Mfr | IXYS-RF |
Package | Tube |
Published | 2004 |
Series | Z-MOS™ |
Packaging | Tube |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 6 |
ECCN Code | EAR99 |
Max Operating Temperature | 175°C |
Voltage - Rated | 1200V |
Current Rating (Amps) | 8A |
Max Power Dissipation | 880W |
Terminal Position | DUAL |
Terminal Form | FLAT |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Reach Compliance Code | compliant |
Current Rating | 8A |
Frequency | 65MHz |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
JESD-30 Code | R-PDSO-F6 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Configuration | SINGLE |
Operating Mode | ENHANCEMENT MODE |
Case Connection | ISOLATED |
Transistor Application | SWITCHING |
Rise Time | 5ns |
Drain to Source Voltage (Vdss) | 1.2kV |
Polarity/Channel Type | N-CHANNEL |
Transistor Type | N-Channel |
Continuous Drain Current (ID) | 8A |
Gain | 23dB |
Drain Current-Max (Abs) (ID) | 8A |
DS Breakdown Voltage-Min | 1200V |
Power - Output | 880W |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Drain to Source Resistance | 2.1Ohm |
Noise Figure | -- |
Voltage - Test | 100V |
RoHS Status | RoHS Compliant |
REACH SVHC | No SVHC |
Orignal genuine | Each chip comes from the original factory |
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Main products | Only make original stock |
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Spot inventory | Only make original stock |
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Original stock | Bom Distributio | Affordable Price |