• image of 射频金属氧化物半导体场效应晶体管>IXZ308N120
  • image of 射频金属氧化物半导体场效应晶体管>IXZ308N120
IXZ308N120
RF MOSFETs Transistors
IXYS-RF
IXZ308N120 data
-
6-SMD, Flat Lead Exposed Pad
YES

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image of 射频金属氧化物半导体场效应晶体管>IXZ308N120
image of 射频金属氧化物半导体场效应晶体管>IXZ308N120
IXZ308N120
RF MOSFETs Transistors
IXYS-RF
IXZ308N120 data
-
6-SMD, Flat Lead Exposed Pad
YES
TYPEDESCRIPTION
Factory Lead Time 10 Weeks
Surface Mount YES
Package / Case 6-SMD, Flat Lead Exposed Pad
Number of Pins 6
Supplier Device Package DE375
Number of Terminals 6
Transistor Element Material SILICON
RoHS Compliant
Package Shape RECTANGULAR
Manufacturer IXYS Corporation
Product Status Obsolete
Mfr IXYS-RF
Package Tube
Published 2004
Series Z-MOS™
Packaging Tube
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Max Operating Temperature 175°C
Voltage - Rated 1200V
Current Rating (Amps) 8A
Max Power Dissipation 880W
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Current Rating 8A
Frequency 65MHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-F6
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
Transistor Application SWITCHING
Rise Time 5ns
Drain to Source Voltage (Vdss) 1.2kV
Polarity/Channel Type N-CHANNEL
Transistor Type N-Channel
Continuous Drain Current (ID) 8A
Gain 23dB
Drain Current-Max (Abs) (ID) 8A
DS Breakdown Voltage-Min 1200V
Power - Output 880W
FET Technology METAL-OXIDE SEMICONDUCTOR
Drain to Source Resistance 2.1Ohm
Noise Figure --
Voltage - Test 100V
RoHS Status RoHS Compliant
REACH SVHC No SVHC
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