D1020UK RF MOSFETs Transistors_Electronic components_ Integrated circuit IC_ Semiconductor components_ Equipment procurement_ EIS LIMITED

TYPE	DESCRIPTION
Material	Si
ECCN (US)	EAR99
HTS	8541.29.00.95
Channel Mode	Enhancement
Number of Elements per Chip	2
Process Technology	DMOS
Maximum Drain Source Voltage (V)	70
Maximum Gate Source Voltage (V)	±20
Maximum VSWR	20(Min)
Maximum Continuous Drain Current (A)	25
Typical Input Capacitance @ Vds (pF)	300(Max)@28V
Maximum Power Dissipation (mW)	389000
Output Power (W)	150
Typical Power Gain (dB)	10(Min)
Maximum Frequency (MHz)	500
Minimum Frequency (MHz)	1
Typical Drain Efficiency (%)	50(Min)
Minimum Operating Temperature (°C)	-65
Maximum Operating Temperature (°C)	200
Automotive	No
Supplier Package	Case DR
Military	No
Mounting	Screw
Package Height	5.08
Package Length	34.03
Package Width	22.22(Max)
PCB changed	5
Part Status	Active
Pin Count	5
Configuration	Dual Common Source
Channel Type	N
RoHS Status	RoHS Compliant


Orignal genuine	Each chip comes from the original factory

Main products	Only make original stock

Spot inventory	Only make original stock

Original stock

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