• image of 射频金属氧化物半导体场效应晶体管>BLU6H0410L-600P,11
  • image of 射频金属氧化物半导体场效应晶体管>BLU6H0410L-600P,11
BLU6H0410L-600P,11
RF MOSFETs Transistors
Ampleon USA Inc.
BLU6H0410L-600P
-
SOT539A
YES

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image of 射频金属氧化物半导体场效应晶体管>BLU6H0410L-600P,11
image of 射频金属氧化物半导体场效应晶体管>BLU6H0410L-600P,11
BLU6H0410L-600P,11
RF MOSFETs Transistors
Ampleon USA Inc.
BLU6H0410L-600P
-
SOT539A
YES
TYPEDESCRIPTION
Factory Lead Time 13 Weeks
Package / Case SOT539A
Surface Mount YES
Transistor Element Material SILICON
Packaging Tray
Published 2011
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Voltage - Rated 110V
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Frequency 860MHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reference Standard IEC-60134
JESD-30 Code R-CDFM-F4
Number of Elements 2
Configuration COMMON SOURCE, 2 ELEMENTS
Operating Mode ENHANCEMENT MODE
Current - Test 1.3A
Transistor Application AMPLIFIER
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS (Dual), Common Source
Gain 21dB
DS Breakdown Voltage-Min 110V
Power - Output 250W
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 50V
RoHS Status ROHS3 Compliant
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