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  • image of 射频金属氧化物半导体场效应晶体管>BLF7G27LS-140,118
  • image of 射频金属氧化物半导体场效应晶体管>BLF7G27LS-140,118
： BLF7G27LS-140,118
： RF MOSFETs Transistors
： Ampleon USA Inc.
： BLF7G27LS-140,1
： -
： SOT-502B
： YES

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image of 射频金属氧化物半导体场效应晶体管>BLF7G27LS-140,118
image of 射频金属氧化物半导体场效应晶体管>BLF7G27LS-140,118
：
BLF7G27LS-140,118
：
RF MOSFETs Transistors
：
Ampleon USA Inc.
：
BLF7G27LS-140,1
：
-
：
SOT-502B
：
YES
TYPEDESCRIPTION
Factory Lead Time 13 Weeks
Package / Case SOT-502B
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Published 2010
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Voltage - Rated 65V
Current Rating (Amps) 28A
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Frequency 2.5GHz~2.7GHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BLF7G27
Reference Standard IEC-60134
JESD-30 Code R-CDFP-F2
Number of Elements 1
Configuration SINGLE
Operating Mode ENHANCEMENT MODE
Case Connection SOURCE
Current - Test 1.3A
Transistor Application AMPLIFIER
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS
Gain 16.5dB
Drain Current-Max (Abs) (ID) 28A
DS Breakdown Voltage-Min 65V
Power - Output 30W
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 28V
RoHS Status Non-RoHS Compliant
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