• image of 射频金属氧化物半导体场效应晶体管>BLD6G21L-50,112
  • image of 射频金属氧化物半导体场效应晶体管>BLD6G21L-50,112
BLD6G21L-50,112
RF MOSFETs Transistors
Ampleon USA Inc.
BLD6G21L-50,112
-
SOT-1130A
YES

captcha
image of 射频金属氧化物半导体场效应晶体管>BLD6G21L-50,112
image of 射频金属氧化物半导体场效应晶体管>BLD6G21L-50,112
BLD6G21L-50,112
RF MOSFETs Transistors
Ampleon USA Inc.
BLD6G21L-50,112
-
SOT-1130A
YES
TYPEDESCRIPTION
Package / Case SOT-1130A
Supplier Device Package CDFM4
Packaging Tube
Published 2010
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated 65V
Current Rating (Amps) 10.2A
Frequency 2.02GHz
Current - Test 170mA
Transistor Type LDMOS (Dual), Common Source
Gain 14.5dB
Power - Output 8W
Voltage - Test 28V
RoHS Status Non-RoHS Compliant
1.jpg
 Orignal genuine       Each chip comes from the original factory


2.jpg
       

 Main products       Only make original stock


3.jpg
        

 Spot inventory       Only make original stock

4.jpg       

Original stockBom DistributioAffordable Price


+86-13723477211

sales@fuchaoic.com
0