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  • image of 射频金属氧化物半导体场效应晶体管>A3G26D055NT4
  • image of 射频金属氧化物半导体场效应晶体管>A3G26D055NT4
： A3G26D055NT4
： RF MOSFETs Transistors
： NXP USA Inc.
： A3G26D055NT4 da
： -
： 6-LDFN Exposed Pad
： YES

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image of 射频金属氧化物半导体场效应晶体管>A3G26D055NT4
image of 射频金属氧化物半导体场效应晶体管>A3G26D055NT4
：
A3G26D055NT4
：
RF MOSFETs Transistors
：
NXP USA Inc.
：
A3G26D055NT4 da
：
-
：
6-LDFN Exposed Pad
：
YES
TYPEDESCRIPTION
Package / Case 6-LDFN Exposed Pad
Supplier Device Package 6-PDFN (7x6.5)
Mounting Style SMD/SMT
Mfr NXP USA Inc.
Package Digi-Reel?
Product Status Active
RoHS Details
Brand NXP Semiconductors
Manufacturer NXP
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Transistor Polarity Dual N-Channel
Series -
Packaging Cut Tape
Type RF Power MOSFET
Voltage - Rated 125 V
Subcategory MOSFETs
Current Rating (Amps) -
Technology GaN Si
Frequency 100MHz ~ 2.69GHz
Operating Frequency 100 MHz to 2690 MHz
Number of Channels 2 Channel
Output Power 8 W
Current - Test 40 mA
Product Type RF MOSFET Transistors
Transistor Type GaN
Gain 13.9dB
Power - Output 8W
Noise Figure -
Voltage - Test 48 V
Product Category RF MOSFET Transistors
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