: | IPG20N04S4L08ATMA1 |
---|---|
: | MOSFETs Transistors Arrays |
: | Infineon Technologies |
: | IPG20N04S4L08AT |
: | - |
: | 8-PowerVDFN |
: | YES |
TYPE | DESCRIPTION |
Factory Lead Time | 12 Weeks |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 8-PowerVDFN |
Number of Pins | 8 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tape & Reel (TR) |
Series | Automotive, AEC-Q101, OptiMOS™ |
Published | 2010 |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 8 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Additional Feature | LOGIC LEVEL COMPATIBLE |
Max Power Dissipation | 54W |
Terminal Form | FLAT |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Reach Compliance Code | not_compliant |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Number of Elements | 2 |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
Operating Mode | ENHANCEMENT MODE |
Turn On Delay Time | 7 ns |
Power - Max | 54W |
FET Type | 2 N-Channel (Dual) |
Rds On (Max) @ Id, Vgs | 8.2m Ω @ 17A, 10V |
Vgs(th) (Max) @ Id | 2.2V @ 22μA |
Halogen Free | Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds | 3050pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 39nC @ 10V |
Rise Time | 3ns |
Fall Time (Typ) | 20 ns |
Turn-Off Delay Time | 40 ns |
Continuous Drain Current (ID) | 20A |
Gate to Source Voltage (Vgs) | 16V |
Max Dual Supply Voltage | 40V |
Avalanche Energy Rating (Eas) | 145 mJ |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
FET Feature | Logic Level Gate |
RoHS Status | ROHS3 Compliant |
Lead Free | Contains Lead |
Orignal genuine | Each chip comes from the original factory |
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Main products | Only make original stock |
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Spot inventory | Only make original stock |
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Original stock | Bom Distributio | Affordable Price |