FDS8935 MOSFETs Transistors Arrays_Electronic components_ Integrated circuit IC_ Semiconductor components_ Equipment procurement_ EIS LIMITED

TYPE	DESCRIPTION
Lifecycle Status	ACTIVE (Last Updated: 6 days ago)
Factory Lead Time	11 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	187mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	PowerTrench®
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Max Power Dissipation	3.1W
Terminal Form	GULL WING
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3.1W
Turn On Delay Time	5 ns
Power - Max	1.6W
FET Type	2 P-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	183m Ω @ 2.1A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	879pF @ 40V
Gate Charge (Qg) (Max) @ Vgs	19nC @ 10V
Rise Time	3ns
Drain to Source Voltage (Vdss)	80V
Fall Time (Typ)	3 ns
Turn-Off Delay Time	22 ns
Continuous Drain Current (ID)	2.1A
Threshold Voltage	-1.8V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	-80V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Nominal Vgs	-1.8 V
Feedback Cap-Max (Crss)	36 pF
Height	1.5mm
Length	4mm
Width	5mm
REACH SVHC	No SVHC
Radiation Hardening	No
RoHS Status	ROHS3 Compliant


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