• image of 金属氧化物半导体场效应晶体管阵列>CAS300M12BM2
  • image of 金属氧化物半导体场效应晶体管阵列>CAS300M12BM2
CAS300M12BM2
MOSFETs Transistors Arrays
Cree/Wolfspeed
CAS300M12BM2 da
-
Module, Screw Terminals
YES

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image of 金属氧化物半导体场效应晶体管阵列>CAS300M12BM2
image of 金属氧化物半导体场效应晶体管阵列>CAS300M12BM2
CAS300M12BM2
MOSFETs Transistors Arrays
Cree/Wolfspeed
CAS300M12BM2 da
-
Module, Screw Terminals
YES
TYPEDESCRIPTION
Factory Lead Time 19 Weeks
Mount Screw
Mounting Type Chassis Mount
Package / Case Module, Screw Terminals
Number of Pins 7
Supplier Device Package Module
Operating Temperature 150°C TJ
Packaging Bulk
Series Z-FET™
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Max Power Dissipation 1.66kW
Number of Elements 2
Power Dissipation 1.66kW
Power - Max 1660W
FET Type 2 N-Channel (Half Bridge)
Rds On (Max) @ Id, Vgs 5.7mOhm @ 300A, 20V
Vgs(th) (Max) @ Id 2.3V @ 15mA (Typ)
Input Capacitance (Ciss) (Max) @ Vds 11700pF @ 600V
Current - Continuous Drain (Id) @ 25°C 423A Tc
Gate Charge (Qg) (Max) @ Vgs 1025nC @ 20V
Drain to Source Voltage (Vdss) 1200V 1.2kV
Continuous Drain Current (ID) 300A
Threshold Voltage 2.3V
Gate to Source Voltage (Vgs) 25V
FET Feature Silicon Carbide (SiC)
Drain to Source Resistance 5mOhm
REACH SVHC No SVHC
RoHS Status RoHS Compliant
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