• image of 预偏置双极性结型晶体管>PDTA124XT,215
  • image of 预偏置双极性结型晶体管>PDTA124XT,215
PDTA124XT,215
Pre-Biased BJT Transistors
Nexperia USA Inc.
PDTA124XT,215 d
-
TO-236-3, SC-59, SOT-23-3
YES

captcha
image of 预偏置双极性结型晶体管>PDTA124XT,215
image of 预偏置双极性结型晶体管>PDTA124XT,215
PDTA124XT,215
Pre-Biased BJT Transistors
Nexperia USA Inc.
PDTA124XT,215 d
-
TO-236-3, SC-59, SOT-23-3
YES
TYPEDESCRIPTION
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 4.535924g
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 2.1
HTS Code 8541.21.00.95
Max Power Dissipation 250mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number PDTA124
Pin Count 3
Number of Elements 1
Polarity PNP
Element Configuration Single
Transistor Application SWITCHING
Transistor Type PNP - Pre-Biased
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 150mV @ 500μA, 10mA
Collector Emitter Breakdown Voltage 50V
Max Breakdown Voltage 50V
Resistor - Base (R1) 22 k Ω
Resistor - Emitter Base (R2) 47 k Ω
Height 6.35mm
Length 6.35mm
Width 6.35mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
1.jpg
 Orignal genuine       Each chip comes from the original factory


2.jpg
       

 Main products       Only make original stock


3.jpg
        

 Spot inventory       Only make original stock

4.jpg       

Original stockBom DistributioAffordable Price


+86-13723477211

sales@fuchaoic.com
0