• image of 预偏置双极性结型晶体管>PBRN123YT,215
  • image of 预偏置双极性结型晶体管>PBRN123YT,215
PBRN123YT,215
Pre-Biased BJT Transistors
Nexperia USA Inc.
PBRN123YT,215 d
-
TO-236-3, SC-59, SOT-23-3
YES

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image of 预偏置双极性结型晶体管>PBRN123YT,215
image of 预偏置双极性结型晶体管>PBRN123YT,215
PBRN123YT,215
Pre-Biased BJT Transistors
Nexperia USA Inc.
PBRN123YT,215 d
-
TO-236-3, SC-59, SOT-23-3
YES
TYPEDESCRIPTION
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 4.55
Max Power Dissipation 250mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number PBRN123
Pin Count 3
Max Output Current 800mA
Operating Supply Voltage 40V
Number of Elements 1
Polarity NPN
Element Configuration Single
Transistor Application SWITCHING
Transistor Type NPN - Pre-Biased
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 500 @ 300mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 1.15V @ 8mA, 800mA
Collector Emitter Breakdown Voltage 40V
Collector Emitter Saturation Voltage 1.15V
Max Breakdown Voltage 40V
Emitter Base Voltage (VEBO) 5V
Resistor - Base (R1) 2.2 k Ω
Resistor - Emitter Base (R2) 10 k Ω
Height 1mm
Length 3mm
Width 1.4mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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