• image of 预偏置双极性结型晶体管>DTC023JMT2L
  • image of 预偏置双极性结型晶体管>DTC023JMT2L
DTC023JMT2L
Pre-Biased BJT Transistors
ROHM Semiconductor
DTC023JMT2L dat
-
SOT-723
YES

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image of 预偏置双极性结型晶体管>DTC023JMT2L
image of 预偏置双极性结型晶体管>DTC023JMT2L
DTC023JMT2L
Pre-Biased BJT Transistors
ROHM Semiconductor
DTC023JMT2L dat
-
SOT-723
YES
TYPEDESCRIPTION
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-723
Number of Pins 3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Published 2011
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Max Operating Temperature 150°C
Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 21
Max Power Dissipation 150mW
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10
Output Voltage 70mV
Number of Elements 1
Polarity NPN
Element Configuration Single
Transistor Application SWITCHING
Transistor Type NPN - Pre-Biased
Collector Emitter Voltage (VCEO) 150mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA 10V
Vce Saturation (Max) @ Ib, Ic 150mV @ 500μA, 5mA
Collector Emitter Breakdown Voltage 50V
Max Frequency 250MHz
Transition Frequency 250MHz
Max Breakdown Voltage 50V
Resistor - Base (R1) 2.2 k Ω
Continuous Collector Current 100mA
Resistor - Emitter Base (R2) 47 k Ω
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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