• image of 预偏置双极性结型晶体管>DRC2144G0L
  • image of 预偏置双极性结型晶体管>DRC2144G0L
DRC2144G0L
Pre-Biased BJT Transistors
Panasonic Electronic Components
DRC2144G0L data
-
TO-236-3, SC-59, SOT-23-3
YES

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image of 预偏置双极性结型晶体管>DRC2144G0L
image of 预偏置双极性结型晶体管>DRC2144G0L
DRC2144G0L
Pre-Biased BJT Transistors
Panasonic Electronic Components
DRC2144G0L data
-
TO-236-3, SC-59, SOT-23-3
YES
TYPEDESCRIPTION
Factory Lead Time 10 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Max Operating Temperature 150°C
HTS Code 8541.21.00.95
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number DRC2144
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 200mW
Transistor Application SWITCHING
Transistor Type NPN - Pre-Biased
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 500μA, 10mA
Collector Emitter Breakdown Voltage 50V
Collector Emitter Saturation Voltage 250mV
Max Breakdown Voltage 50V
Continuous Collector Current 100mA
Resistor - Emitter Base (R2) 47 k Ω
Height 1.1mm
Length 2.9mm
Width 1.5mm
RoHS Status RoHS Compliant
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