• image of 预偏置双极性结型晶体管>DDTA114YLP-7
  • image of 预偏置双极性结型晶体管>DDTA114YLP-7
DDTA114YLP-7
Pre-Biased BJT Transistors
Diodes Incorporated
DDTA114YLP-7 da
-
3-UFDFN
YES

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image of 预偏置双极性结型晶体管>DDTA114YLP-7
image of 预偏置双极性结型晶体管>DDTA114YLP-7
DDTA114YLP-7
Pre-Biased BJT Transistors
Diodes Incorporated
DDTA114YLP-7 da
-
3-UFDFN
YES
TYPEDESCRIPTION
Factory Lead Time 19 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-UFDFN
Number of Pins 3
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 4.7, HIGH RELIABILITY
Max Power Dissipation 250mW
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number DDTA114
Pin Count 3
Number of Elements 1
Polarity PNP
Element Configuration Single
Case Connection COLLECTOR
Transistor Type PNP - Pre-Biased
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 2.5mA, 50mA
Collector Emitter Breakdown Voltage 50V
Transition Frequency 250MHz
Frequency - Transition 250MHz
hFE Min 80
Resistor - Base (R1) 10 k Ω
Continuous Collector Current 100mA
Resistor - Emitter Base (R2) 47 k Ω
Height 470μm
Length 1mm
Width 600μm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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