SS8550CBU Single BJT Transistors_Electronic components_ Integrated circuit IC_ Semiconductor components_ Equipment procurement_ EIS LIMITED

TYPE	DESCRIPTION
Lifecycle Status	ACTIVE (Last Updated: 2 days ago)
Factory Lead Time	6 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA)
Number of Pins	3
Weight	179mg
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Bulk
Published	2007
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Voltage - Rated DC	-25V
Max Power Dissipation	1W
Terminal Position	BOTTOM
Current Rating	-1.5A
Frequency	200MHz
Base Part Number	SS8550
Number of Elements	1
Element Configuration	Single
Power Dissipation	1W
Transistor Application	AMPLIFIER
Gain Bandwidth Product	200MHz
Polarity/Channel Type	PNP
Transistor Type	PNP
Collector Emitter Voltage (VCEO)	25V
Max Collector Current	1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 100mA 1V
Current - Collector Cutoff (Max)	100nA ICBO
Vce Saturation (Max) @ Ib, Ic	500mV @ 80mA, 800mA
Collector Emitter Breakdown Voltage	25V
Transition Frequency	200MHz
Collector Emitter Saturation Voltage	-280mV
Collector Base Voltage (VCBO)	-40V
Emitter Base Voltage (VEBO)	-6V
hFE Min	85
REACH SVHC	No SVHC
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free


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