FSB649 Single BJT Transistors_Electronic components_ Integrated circuit IC_ Semiconductor components_ Equipment procurement_ EIS LIMITED

TYPE	DESCRIPTION
Lifecycle Status	ACTIVE (Last Updated: 1 day ago)
Factory Lead Time	20 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Weight	30mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2008
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Voltage - Rated DC	25V
Max Power Dissipation	500mW
Terminal Position	DUAL
Terminal Form	GULL WING
Current Rating	3A
Base Part Number	FSB649
Number of Elements	1
Element Configuration	Single
Power Dissipation	500mW
Polarity/Channel Type	NPN
Transistor Type	NPN
Collector Emitter Voltage (VCEO)	25V
Max Collector Current	3A
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 1A 2V
Current - Collector Cutoff (Max)	100nA ICBO
Vce Saturation (Max) @ Ib, Ic	600mV @ 300mA, 3A
Collector Emitter Breakdown Voltage	25V
Transition Frequency	150MHz
Collector Emitter Saturation Voltage	600mV
Max Breakdown Voltage	25V
Frequency - Transition	150MHz
Collector Base Voltage (VCBO)	35V
Emitter Base Voltage (VEBO)	5V
hFE Min	100
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free


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