BD682 Single BJT Transistors_Electronic components_ Integrated circuit IC_ Semiconductor components_ Equipment procurement_ EIS LIMITED

TYPE	DESCRIPTION
Lifecycle Status	ACTIVE (Last Updated: 8 months ago)
Factory Lead Time	8 Weeks
Contact Plating	Tin
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-225AA, TO-126-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tube
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Voltage - Rated DC	-100V
Max Power Dissipation	40W
Current Rating	-4A
Base Part Number	BD682
Pin Count	3
Number of Elements	1
Polarity	PNP
Element Configuration	Single
Power Dissipation	40W
Case Connection	ISOLATED
Transistor Application	SWITCHING
Transistor Type	PNP - Darlington
Collector Emitter Voltage (VCEO)	100V
Max Collector Current	4A
DC Current Gain (hFE) (Min) @ Ic, Vce	750 @ 1.5A 3V
Current - Collector Cutoff (Max)	500μA
Vce Saturation (Max) @ Ib, Ic	2.5V @ 30mA, 1.5A
Collector Emitter Breakdown Voltage	100V
Transition Frequency	10MHz
Collector Emitter Saturation Voltage	2.5V
Max Breakdown Voltage	100V
Collector Base Voltage (VCBO)	100V
Emitter Base Voltage (VEBO)	5V
hFE Min	750
Continuous Collector Current	4A
Height	10.8mm
Length	7.8mm
Width	2.7mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free


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