SD1013-03 RF BJT Transistors_Electronic components_ Integrated circuit IC_ Semiconductor components_ Equipment procurement_ EIS LIMITED

TYPE	DESCRIPTION
Lifecycle Status	IN PRODUCTION (Last Updated: 1 month ago)
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	M113
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	200°C TJ
Packaging	Bulk
Published	2001
JESD-609 Code	e0
Pbfree Code	no
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Terminal Finish	TIN LEAD
Additional Feature	HIGH RELIABILITY
Max Power Dissipation	13W
Terminal Position	RADIAL
Terminal Form	FLAT
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN RESISTOR
Power - Max	13W
Transistor Application	AMPLIFIER
Polarity/Channel Type	NPN
Transistor Type	NPN
Collector Emitter Voltage (VCEO)	35V
Max Collector Current	1A
DC Current Gain (hFE) (Min) @ Ic, Vce	10 @ 200mA 5V
Collector Emitter Breakdown Voltage	35V
Gain	10dB
Transition Frequency	150MHz
Frequency - Transition	150MHz
Collector Base Voltage (VCBO)	65V
Highest Frequency Band	VERY HIGH FREQUENCY B
Collector-Base Capacitance-Max	15pF
Radiation Hardening	No
RoHS Status	RoHS Compliant


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