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  • image of 射频双极性结型晶体管>PN5179_D75Z
  • image of 射频双极性结型晶体管>PN5179_D75Z
： PN5179_D75Z
： RF BJT Transistors
： ON Semiconductor
： PN5179_D75Z dat
： -
： TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
： YES

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image of 射频双极性结型晶体管>PN5179_D75Z
image of 射频双极性结型晶体管>PN5179_D75Z
：
PN5179_D75Z
：
RF BJT Transistors
：
ON Semiconductor
：
PN5179_D75Z dat
：
-
：
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
：
YES
TYPEDESCRIPTION
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package TO-92-3
Operating Temperature -55°C~150°C TJ
Packaging Tape & Box (TB)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number 2N5179
Power - Max 350mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 3mA 1V
Gain 15dB
Voltage - Collector Emitter Breakdown (Max) 12V
Current - Collector (Ic) (Max) 50mA
Frequency - Transition 2GHz
Noise Figure (dB Typ @ f) 5dB @ 200MHz
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