NE85633L-A RF BJT Transistors_Electronic components_ Integrated circuit IC_ Semiconductor components_ Equipment procurement_ EIS LIMITED

TYPE	DESCRIPTION
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	SOT-23
Weight	1.437803g
Operating Temperature	150°C TJ
Packaging	Bulk
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Power Dissipation	200mW
Base Part Number	NE85633
Polarity	NPN
Element Configuration	Single
Power - Max	200mW
Transistor Type	NPN
Collector Emitter Voltage (VCEO)	12V
Max Collector Current	100mA
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 20mA 10V
Collector Emitter Breakdown Voltage	12V
Gain	9dB
Voltage - Collector Emitter Breakdown (Max)	12V
Current - Collector (Ic) (Max)	100mA
Frequency - Transition	7GHz
Emitter Base Voltage (VEBO)	3V
Continuous Collector Current	100mA
Noise Figure (dB Typ @ f)	1.4dB ~ 2dB @ 1GHz
RoHS Status	RoHS Compliant


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