• image of 射频双极性结型晶体管>NE687M03-T1-A
  • image of 射频双极性结型晶体管>NE687M03-T1-A
NE687M03-T1-A
RF BJT Transistors
CEL
NE687M03-T1-A d
-
SOT-623F
YES

captcha
image of 射频双极性结型晶体管>NE687M03-T1-A
image of 射频双极性结型晶体管>NE687M03-T1-A
NE687M03-T1-A
RF BJT Transistors
CEL
NE687M03-T1-A d
-
SOT-623F
YES
TYPEDESCRIPTION
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-623F
Number of Pins 3
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 90mW
Base Part Number NE687
Element Configuration Single
Power Dissipation 90mW
Transistor Type NPN
Collector Emitter Voltage (VCEO) 3V
Max Collector Current 30mA
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 20mA 2V
Collector Emitter Breakdown Voltage 3V
Frequency - Transition 14GHz
Continuous Collector Current 30mA
Noise Figure (dB Typ @ f) 1.3dB ~ 2dB @ 2GHz
RoHS Status RoHS Compliant
1.jpg
 Orignal genuine       Each chip comes from the original factory


2.jpg
       

 Main products       Only make original stock


3.jpg
        

 Spot inventory       Only make original stock

4.jpg       

Original stockBom DistributioAffordable Price


+86-13723477211

sales@fuchaoic.com
0