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  • image of 射频双极性结型晶体管>NE68039-A
  • image of 射频双极性结型晶体管>NE68039-A
： NE68039-A
： RF BJT Transistors
： CEL
： NE68039-A datas
： -
： TO-253-4, TO-253AA
： YES

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image of 射频双极性结型晶体管>NE68039-A
image of 射频双极性结型晶体管>NE68039-A
：
NE68039-A
：
RF BJT Transistors
：
CEL
：
NE68039-A datas
：
-
：
TO-253-4, TO-253AA
：
YES
TYPEDESCRIPTION
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-253-4, TO-253AA
Number of Pins 4
Operating Temperature 150°C TJ
Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 200mW
Base Part Number NE68039
Element Configuration Single
Power Dissipation 200mW
Transistor Type NPN
Collector Emitter Voltage (VCEO) 10V
Max Collector Current 35mA
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA 6V
Collector Emitter Breakdown Voltage 10V
Gain 11dB
Frequency - Transition 10GHz
Collector Base Voltage (VCBO) 20V
Continuous Collector Current 35mA
Noise Figure (dB Typ @ f) 1.8dB @ 2GHz
Radiation Hardening No
RoHS Status RoHS Compliant
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