MRF581AG RF BJT Transistors_Electronic components_ Integrated circuit IC_ Semiconductor components_ Equipment procurement_ EIS LIMITED

TYPE	DESCRIPTION
Lifecycle Status	OBSOLETE (Last Updated: 2 weeks ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	Macro-X
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Bulk
Published	2004
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Terminal Finish	TIN SILVER COPPER
Max Power Dissipation	1.25W
Terminal Position	RADIAL
Terminal Form	FLAT
Base Part Number	MRF581
Pin Count	4
Number of Elements	1
Configuration	SINGLE
Power - Max	1.25W
Transistor Application	AMPLIFIER
Polarity/Channel Type	NPN
Transistor Type	NPN
Collector Emitter Voltage (VCEO)	15V
Max Collector Current	200mA
DC Current Gain (hFE) (Min) @ Ic, Vce	90 @ 50mA 5V
Collector Emitter Breakdown Voltage	15V
Gain	13dB ~ 15.5dB
Transition Frequency	5000MHz
Frequency - Transition	5GHz
Collector Base Voltage (VCBO)	30V
Highest Frequency Band	ULTRA HIGH FREQUENCY B
Collector-Base Capacitance-Max	3pF
Noise Figure (dB Typ @ f)	3dB ~ 3.5dB @ 500MHz
Radiation Hardening	No
RoHS Status	RoHS Compliant


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