• image of 射频双极性结型晶体管>MRF5812GR2
  • image of 射频双极性结型晶体管>MRF5812GR2
MRF5812GR2
RF BJT Transistors
Microsemi Corporation
MRF5812GR2 data
-
8-SOIC (0.154, 3.90mm Width)
YES

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image of 射频双极性结型晶体管>MRF5812GR2
image of 射频双极性结型晶体管>MRF5812GR2
MRF5812GR2
RF BJT Transistors
Microsemi Corporation
MRF5812GR2 data
-
8-SOIC (0.154, 3.90mm Width)
YES
TYPEDESCRIPTION
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Published 2004
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish MATTE TIN
Additional Feature LOW NOISE
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MRF5812
Pin Count 8
JESD-30 Code R-PDSO-G8
Number of Elements 1
Configuration SINGLE
Power - Max 1.25W
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 50mA 5V
Gain 13dB ~ 15.5dB
Voltage - Collector Emitter Breakdown (Max) 15V
Current - Collector (Ic) (Max) 200mA
Transition Frequency 5000MHz
Frequency - Transition 5GHz
Power Dissipation-Max (Abs) 1.25W
Highest Frequency Band ULTRA HIGH FREQUENCY B
Collector-Base Capacitance-Max 2pF
Noise Figure (dB Typ @ f) 2dB ~ 3dB @ 500MHz
RoHS Status RoHS Compliant
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