MRF10502 RF BJT Transistors_Electronic components_ Integrated circuit IC_ Semiconductor components_ Equipment procurement_ EIS LIMITED

TYPE	DESCRIPTION
Factory Lead Time	20 Weeks
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	355J-02
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	200°C TJ
Packaging	Tray
Published	2009
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Additional Feature	WITH EMITTER BALLASTING RESISTOR
Max Power Dissipation	1.46kW
Terminal Position	DUAL
Terminal Form	FLAT
Frequency	1.15GHz
Pin Count	2
JESD-30 Code	R-CDFM-F2
Number of Elements	1
Element Configuration	Single
Case Connection	BASE
Power - Max	500W
Transistor Application	AMPLIFIER
Polarity/Channel Type	NPN
Transistor Type	NPN
Collector Emitter Voltage (VCEO)	65V
Max Collector Current	29A
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 5A 5V
Collector Emitter Breakdown Voltage	65V
Gain	9dB
Collector Base Voltage (VCBO)	65V
Emitter Base Voltage (VEBO)	3.5V
hFE Min	20
Continuous Collector Current	29A
Radiation Hardening	No
RoHS Status	ROHS3 Compliant


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