• image of 射频双极性结型晶体管>AT-32011-BLKG
  • image of 射频双极性结型晶体管>AT-32011-BLKG
AT-32011-BLKG
RF BJT Transistors
Broadcom Limited
AT-32011-BLKG d
-
TO-253-4, TO-253AA
YES

captcha
image of 射频双极性结型晶体管>AT-32011-BLKG
image of 射频双极性结型晶体管>AT-32011-BLKG
AT-32011-BLKG
RF BJT Transistors
Broadcom Limited
AT-32011-BLKG d
-
TO-253-4, TO-253AA
YES
TYPEDESCRIPTION
Factory Lead Time 6 Weeks
Mounting Type Surface Mount
Package / Case TO-253-4, TO-253AA
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Bulk
Published 2005
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY, LOW NOISE
HTS Code 8541.21.00.75
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number AT32011
JESD-30 Code R-PDSO-G4
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Power - Max 200mW
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 2mA 2.7V
Gain 12.5dB ~ 14dB
Voltage - Collector Emitter Breakdown (Max) 5.5V
Current - Collector (Ic) (Max) 32mA
Power Dissipation-Max (Abs) 0.2W
Highest Frequency Band ULTRA HIGH FREQUENCY B
Noise Figure (dB Typ @ f) 1dB ~ 1.3dB @ 900MHz
RoHS Status RoHS Compliant
1.jpg
 Orignal genuine       Each chip comes from the original factory


2.jpg
       

 Main products       Only make original stock


3.jpg
        

 Spot inventory       Only make original stock

4.jpg       

Original stockBom DistributioAffordable Price


+86-13723477211

sales@fuchaoic.com
0