PEMH20%2C115 BJT Transistors Arrays_Electronic components_ Integrated circuit IC_ Semiconductor components_ Equipment procurement_ EIS LIMITED

TYPE	DESCRIPTION
Factory Lead Time	4 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Number of Pins	6
Packaging	Tape & Reel (TR)
Published	2009
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Max Operating Temperature	150°C
Min Operating Temperature	-65°C
Additional Feature	BUILT IN BIAS RESISTOR RATIO 1
Max Power Dissipation	300mW
Terminal Form	FLAT
Pin Count	6
Number of Elements	2
Polarity	NPN
Element Configuration	Dual
Transistor Application	SWITCHING
Transistor Type	2 NPN - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO)	50V
Max Collector Current	100mA
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 20mA 5V
Current - Collector Cutoff (Max)	1μA
Vce Saturation (Max) @ Ib, Ic	150mV @ 500μA, 10mA
Collector Emitter Breakdown Voltage	50V
Resistor - Base (R1)	2.2k Ω
Resistor - Emitter Base (R2)	2.2k Ω
Radiation Hardening	No
RoHS Status	ROHS3 Compliant


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