• image of 双极性结型晶体管阵列>NSVB144EPDXV6T1G
  • image of 双极性结型晶体管阵列>NSVB144EPDXV6T1G
NSVB144EPDXV6T1G
BJT Transistors Arrays
ON Semiconductor
NSVB144EPDXV6T1
-
SOT-563, SOT-666
YES

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image of 双极性结型晶体管阵列>NSVB144EPDXV6T1G
image of 双极性结型晶体管阵列>NSVB144EPDXV6T1G
NSVB144EPDXV6T1G
BJT Transistors Arrays
ON Semiconductor
NSVB144EPDXV6T1
-
SOT-563, SOT-666
YES
TYPEDESCRIPTION
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Surface Mount YES
Number of Pins 6
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Published 2012
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 500mW
Pin Count 6
Number of Elements 2
Power - Max 500mW
Polarity/Channel Type NPN/PNP
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 250mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 300μA, 10mA
Collector Emitter Breakdown Voltage 50V
hFE Min 80
Resistor - Base (R1) 47k Ω
Resistor - Emitter Base (R2) 47k Ω
RoHS Status RoHS Compliant
Lead Free Lead Free
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