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  • image of 双极性结型晶体管阵列>NSM21356DW6T1G
NSM21356DW6T1G
BJT Transistors Arrays
ON Semiconductor
NSM21356DW6T1G
-
6-TSSOP, SC-88, SOT-363
YES

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image of 双极性结型晶体管阵列>NSM21356DW6T1G
image of 双极性结型晶体管阵列>NSM21356DW6T1G
NSM21356DW6T1G
BJT Transistors Arrays
ON Semiconductor
NSM21356DW6T1G
-
6-TSSOP, SC-88, SOT-363
YES
TYPEDESCRIPTION
Lifecycle Status LAST SHIPMENTS (Last Updated: 2 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature BUILT IN BIAS RESISTOR RATIO IS 1
HTS Code 8541.21.00.95
Max Power Dissipation 230mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 6
Qualification Status Not Qualified
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Power - Max 230mW
Transistor Application SWITCHING
Polarity/Channel Type NPN AND PNP
Transistor Type 1 NPN Pre-Biased, 1 PNP
Collector Emitter Voltage (VCEO) 250mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA 10V / 220 @ 2mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 300μA, 10mA / 650mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage 65V
Voltage - Collector Emitter Breakdown (Max) 50V 65V
Resistor - Base (R1) 47k Ω
Resistor - Emitter Base (R2) 47k Ω
RoHS Status RoHS Compliant
Lead Free Lead Free
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