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  • image of 双极性结型晶体管阵列>NSBC124EPDXV6T1
NSBC124EPDXV6T1
BJT Transistors Arrays
ON Semiconductor
NSBC124EPDXV6T1
-
SOT-563, SOT-666
YES

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image of 双极性结型晶体管阵列>NSBC124EPDXV6T1
image of 双极性结型晶体管阵列>NSBC124EPDXV6T1
NSBC124EPDXV6T1
BJT Transistors Arrays
ON Semiconductor
NSBC124EPDXV6T1
-
SOT-563, SOT-666
YES
TYPEDESCRIPTION
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature BUILT IN BIAS RESISTOR RATIO IS 1
Voltage - Rated DC 50V
Max Power Dissipation 500mW
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Current Rating 100mA
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number NSBC1*
Pin Count 6
JESD-30 Code R-PDSO-F6
Qualification Status Not Qualified
Number of Elements 2
Polarity PNP
Element Configuration Dual
Power Dissipation 357mW
Transistor Application SWITCHING
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 250mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 300μA, 10mA
Collector Emitter Breakdown Voltage 50V
Max Breakdown Voltage 50V
hFE Min 60
Resistor - Base (R1) 22k Ω
Continuous Collector Current 100mA
Resistor - Emitter Base (R2) 22k Ω
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
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