MUN5114DW1T1G BJT Transistors Arrays_Electronic components_ Integrated circuit IC_ Semiconductor components_ Equipment procurement_ EIS LIMITED

TYPE	DESCRIPTION
Lifecycle Status	ACTIVE (Last Updated: 3 days ago)
Factory Lead Time	8 Weeks
Contact Plating	Tin
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Surface Mount	YES
Number of Pins	6
Packaging	Tape & Reel (TR)
Published	2005
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Additional Feature	BUILT-IN BIAS RESISTOR RATIO IS 0.21
Voltage - Rated DC	-50V
Max Power Dissipation	250mW
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	-100mA
Time@Peak Reflow Temperature-Max (s)	40
Base Part Number	MUN51**DW1T
Pin Count	6
Number of Elements	2
Polarity	PNP
Element Configuration	Dual
Power Dissipation	250mW
Transistor Application	SWITCHING
Halogen Free	Halogen Free
Transistor Type	2 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO)	50V
Max Collector Current	100mA
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 5mA 10V
Current - Collector Cutoff (Max)	500nA
Vce Saturation (Max) @ Ib, Ic	250mV @ 300μA, 10mA
Collector Emitter Breakdown Voltage	50V
Max Breakdown Voltage	50V
hFE Min	80
Resistor - Base (R1)	10k Ω
Continuous Collector Current	-100mA
Resistor - Emitter Base (R2)	47k Ω
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free


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