ZDT749TA Arrays BJT Transistors_Electronic components_ Integrated circuit IC_ Semiconductor components_ Equipment procurement_ EIS LIMITED

TYPE	DESCRIPTION
Factory Lead Time	16 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SMD, Gull Wing
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2000
JESD-609 Code	e3
Pbfree Code	no
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Voltage - Rated DC	-25V
Max Power Dissipation	2.75W
Peak Reflow Temperature (Cel)	260
Current Rating	-6A
Frequency	160MHz
Time@Peak Reflow Temperature-Max (s)	40
Base Part Number	ZDT749
Pin Count	8
Number of Elements	2
Polarity	PNP
Element Configuration	Dual
Power Dissipation	2.75W
Transistor Application	SWITCHING
Gain Bandwidth Product	160MHz
Transistor Type	2 PNP (Dual)
Collector Emitter Voltage (VCEO)	25V
Max Collector Current	2A
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 1A 2V
Current - Collector Cutoff (Max)	100nA ICBO
Vce Saturation (Max) @ Ib, Ic	500mV @ 200mA, 2A
Collector Emitter Breakdown Voltage	25V
Transition Frequency	160MHz
Collector Emitter Saturation Voltage	-230mV
Max Breakdown Voltage	25V
Collector Base Voltage (VCBO)	35V
Emitter Base Voltage (VEBO)	-5V
Continuous Collector Current	-2A
Height	1.6mm
Length	6.7mm
Width	3.7mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free


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