• image of 阵列双极性结型晶体管>VT6T12T2R
  • image of 阵列双极性结型晶体管>VT6T12T2R
VT6T12T2R
Arrays BJT Transistors
ROHM Semiconductor
VT6T12T2R datas
-
6-SMD, Flat Leads
YES

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image of 阵列双极性结型晶体管>VT6T12T2R
image of 阵列双极性结型晶体管>VT6T12T2R
VT6T12T2R
Arrays BJT Transistors
ROHM Semiconductor
VT6T12T2R datas
-
6-SMD, Flat Leads
YES
TYPEDESCRIPTION
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Package / Case 6-SMD, Flat Leads
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e2
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish TIN COPPER
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10
Pin Count 6
JESD-30 Code R-PDSO-F6
Qualification Status Not Qualified
Number of Elements 1
Configuration CURRENT MIRROR
Power - Max 150mW
Polarity/Channel Type PNP
Transistor Type 2 PNP (Dual)
Collector Emitter Voltage (VCEO) 50V
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA 6V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 50mA
Current - Collector (Ic) (Max) 100mA
Transition Frequency 300MHz
Frequency - Transition 300MHz
Power Dissipation-Max (Abs) 0.15W
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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