PBSS5160PAPSX Arrays BJT Transistors_Electronic components_ Integrated circuit IC_ Semiconductor components_ Equipment procurement_ EIS LIMITED

TYPE	DESCRIPTION
Factory Lead Time	8 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-UDFN Exposed Pad
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Cut Tape (CT)
Published	2014
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
Max Power Dissipation	370mW
Terminal Form	NO LEAD
Reference Standard	AEC-Q101; IEC-60134
JESD-30 Code	S-PDSO-N6
Number of Elements	2
Configuration	SEPARATE, 2 ELEMENTS
Case Connection	COLLECTOR
Power - Max	370mW
Transistor Application	SWITCHING
Polarity/Channel Type	PNP
Transistor Type	2 PNP (Dual)
Collector Emitter Voltage (VCEO)	550mV
Max Collector Current	1A
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 500mA 2V
Current - Collector Cutoff (Max)	100nA ICBO
Vce Saturation (Max) @ Ib, Ic	550mV @ 50mA, 1A
Collector Emitter Breakdown Voltage	60V
Transition Frequency	125MHz
Max Breakdown Voltage	60V
Frequency - Transition	125MHz
RoHS Status	ROHS3 Compliant


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