MMDT2222V-7 Arrays BJT Transistors_Electronic components_ Integrated circuit IC_ Semiconductor components_ Equipment procurement_ EIS LIMITED

TYPE	DESCRIPTION
Factory Lead Time	19 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Number of Pins	6
Weight	3.005049mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2005
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Voltage - Rated DC	40V
Max Power Dissipation	150mW
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	260
Current Rating	600mA
Frequency	300MHz
Time@Peak Reflow Temperature-Max (s)	40
Base Part Number	MMDT2222V
Pin Count	6
Number of Elements	2
Polarity	NPN
Element Configuration	Dual
Power Dissipation	150mW
Gain Bandwidth Product	300MHz
Transistor Type	2 NPN (Dual)
Collector Emitter Voltage (VCEO)	40V
Max Collector Current	600mA
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 150mA 10V
Current - Collector Cutoff (Max)	10nA ICBO
Vce Saturation (Max) @ Ib, Ic	1V @ 50mA, 500mA
Collector Emitter Breakdown Voltage	40V
Transition Frequency	300MHz
Collector Emitter Saturation Voltage	1V
Max Breakdown Voltage	40V
Collector Base Voltage (VCBO)	75V
Emitter Base Voltage (VEBO)	6V
hFE Min	35
Height	600μm
Length	1.6mm
Width	1.2mm
REACH SVHC	No SVHC
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free


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