• image of 阵列双极性结型晶体管>BCM856SH6327XTSA1
  • image of 阵列双极性结型晶体管>BCM856SH6327XTSA1
BCM856SH6327XTSA1
Arrays BJT Transistors
Infineon Technologies
BCM856SH6327XTS
-
6-VSSOP, SC-88, SOT-363
YES

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image of 阵列双极性结型晶体管>BCM856SH6327XTSA1
image of 阵列双极性结型晶体管>BCM856SH6327XTSA1
BCM856SH6327XTSA1
Arrays BJT Transistors
Infineon Technologies
BCM856SH6327XTS
-
6-VSSOP, SC-88, SOT-363
YES
TYPEDESCRIPTION
Factory Lead Time 4 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-VSSOP, SC-88, SOT-363
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2006
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Max Power Dissipation 250mW
Terminal Form GULL WING
Frequency 250MHz
Base Part Number BCM856S
Number of Elements 2
Polarity PNP
Power Dissipation 250mW
Transistor Application AMPLIFIER
Halogen Free Halogen Free
Transistor Type 2 PNP (Dual)
Collector Emitter Voltage (VCEO) 5V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage 65V
Transition Frequency 250MHz
Collector Emitter Saturation Voltage 650mV
Max Breakdown Voltage 65V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 5V
Height 800μm
Length 2mm
Width 1.25mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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