• image of 阵列双极性结型晶体管>BC856BS,135
  • image of 阵列双极性结型晶体管>BC856BS,135
BC856BS,135
Arrays BJT Transistors
Nexperia USA Inc.
BC856BS,135 dat
-
6-TSSOP, SC-88, SOT-363
YES

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image of 阵列双极性结型晶体管>BC856BS,135
image of 阵列双极性结型晶体管>BC856BS,135
BC856BS,135
Arrays BJT Transistors
Nexperia USA Inc.
BC856BS,135 dat
-
6-TSSOP, SC-88, SOT-363
YES
TYPEDESCRIPTION
Factory Lead Time 4 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
Published 2009
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Max Power Dissipation 300mW
Terminal Form GULL WING
Frequency 100MHz
Pin Count 6
Number of Elements 2
Polarity NPN, PNP
Power Dissipation 300mW
Transistor Application SWITCHING
Transistor Type 2 PNP (Dual)
Collector Emitter Voltage (VCEO) 65V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage 65V
Current - Collector (Ic) (Max) 100mA
Transition Frequency 100MHz
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 6V
hFE Min 200
Radiation Hardening No
RoHS Status ROHS3 Compliant
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