BC856BS%2C115 Arrays BJT Transistors_Electronic components_ Integrated circuit IC_ Semiconductor components_ Equipment procurement_ EIS LIMITED

TYPE	DESCRIPTION
Factory Lead Time	4 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Series	Automotive, AEC-Q101
Published	2009
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Max Power Dissipation	300mW
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Frequency	100MHz
Time@Peak Reflow Temperature-Max (s)	30
Pin Count	6
JESD-30 Code	R-PDSO-G6
Number of Elements	2
Polarity	NPN, PNP
Element Configuration	Dual
Power Dissipation	300mW
Forward Current	70mA
Transistor Application	SWITCHING
Gain Bandwidth Product	100MHz
Forward Voltage	410mV
Transistor Type	2 PNP (Dual)
Collector Emitter Voltage (VCEO)	65V
Max Collector Current	100mA
Max Repetitive Reverse Voltage (Vrrm)	70V
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 2mA 5V
Current - Collector Cutoff (Max)	15nA ICBO
Vce Saturation (Max) @ Ib, Ic	300mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage	65V
Transition Frequency	100MHz
Max Breakdown Voltage	65V
Collector Base Voltage (VCBO)	80V
Emitter Base Voltage (VEBO)	6V
Max Forward Surge Current (Ifsm)	100mA
hFE Min	290
REACH SVHC	No SVHC
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free


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