• image of 光伏光隔离器>4N25
  • image of 光伏光隔离器>4N25
4N25
Photovoltaic Optoisolators
Vishay Semiconductor Opto Division
4N25 datasheet
-
6-DIP (0.300, 7.62mm)
YES

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image of 光伏光隔离器>4N25
image of 光伏光隔离器>4N25
4N25
Photovoltaic Optoisolators
Vishay Semiconductor Opto Division
4N25 datasheet
-
6-DIP (0.300, 7.62mm)
YES
TYPEDESCRIPTION
Factory Lead Time 14 Weeks
Contact Plating Tin
Mount PCB, Through Hole
Mounting Type Through Hole
Package / Case 6-DIP (0.300, 7.62mm)
Number of Pins 6
Supplier Device Package 6-DIP
Operating Temperature -55°C~100°C
Packaging Tube
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 100°C
Min Operating Temperature -55°C
Max Power Dissipation 150mW
Base Part Number 4N25
Approval Agency UL, VDE
Voltage - Isolation 5000Vrms
Output Voltage 30V
Output Type Transistor with Base
Number of Elements 1
Number of Channels 1
Power Dissipation 150mW
Voltage - Forward (Vf) (Typ) 1.3V
Input Type DC
Forward Current 60mA
Max Output Voltage 30V
Output Current per Channel 50mA
Rise Time 2s
Forward Voltage 1.3V
Fall Time (Typ) 2 s
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 100mA
Collector Emitter Breakdown Voltage 30V
Rise / Fall Time (Typ) 2μs 2μs
Current - Output / Channel 50mA
Reverse Breakdown Voltage 5V
Voltage - Output (Max) 70V
Max Input Current 60mA
Collector Emitter Saturation Voltage 500mV
Current - DC Forward (If) (Max) 60mA
Current Transfer Ratio (Min) 20% @ 10mA
Input Current 50mA
Max Junction Temperature (Tj) 125°C
Vce Saturation (Max) 500mV
Current Transfer Ratio 50 %
Height 4.8mm
REACH SVHC Unknown
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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