• image of 先进先出缓冲存储器>72V3644L10PF8
  • image of 先进先出缓冲存储器>72V3644L10PF8
72V3644L10PF8
FIFOs Memory
Integrated Device Technology (IDT)
128 Termination
-
TQFP
YES

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image of 先进先出缓冲存储器>72V3644L10PF8
image of 先进先出缓冲存储器>72V3644L10PF8
72V3644L10PF8
FIFOs Memory
Integrated Device Technology (IDT)
128 Termination
-
TQFP
YES
TYPEDESCRIPTION
Factory Lead Time 7 Weeks
Contact Plating Lead, Tin
Mount Surface Mount
Package / Case TQFP
Number of Pins 128
Packaging Tape & Reel
Published 2009
JESD-609 Code e0
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 128
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn85Pb15)
Max Operating Temperature 70°C
Min Operating Temperature 0°C
HTS Code 8542.32.00.71
Terminal Position QUAD
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 225
Number of Functions 1
Supply Voltage 3.3V
Terminal Pitch 0.5mm
Frequency 100MHz
Pin Count 128
Operating Supply Voltage 3.3V
Temperature Grade COMMERCIAL
Max Supply Voltage 3.6V
Min Supply Voltage 3V
Element Configuration Dual
Nominal Supply Current 400mA
Max Supply Current 400mA
Frequency (Max) 100MHz
Access Time 6.5 ns
Organization 1KX36
Density 72 kb
Standby Current-Max 0.001A
Parallel/Serial PARALLEL
Sync/Async Synchronous
Word Size 36b
Memory IC Type BI-DIRECTIONAL FIFO
Bus Directional Bidirectional
Retransmit Capability No
FWFT Support Yes
Output Enable YES
Cycle Time 10 ns
Length 20mm
Height Seated (Max) 1.6mm
Width 14mm
Thickness 1.4mm
RoHS Status RoHS Compliant
Lead Free Contains Lead
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